Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide
- 15 January 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 244-248
- https://doi.org/10.1063/1.334796
Abstract
The effect of Pt concentration in Pd thin films on the nucleation and growth of PdSi and PdxPt1−xSi (ternary monosilicide) has been investigated by transmission electron microscopy (TEM). Low concentration of Pt (10 at. %) in Pd film enhances PdSi formation at lower temperature than previously reported. It has been proposed that PdSi formation is governed by its slow nucleation. However, in our studies, the nucleation of PtSi, which is substituted for that of PdSi, triggers the subsequent PdSi growth at low temperatures. High concentration of Pt (55 at. %) in Pd-Pt alloy film lowers the temperature of the phase transformation from metal-rich silicide to monosilicide (PdxPt1−xSi). The temperature is the same as that of PtSi formation. In both cases, the monosilicide layers (about 20 nm) have an epitaxial relationship with (111) Si substrates.This publication has 9 references indexed in Scilit:
- Thermal stability of Pd2Si and PdSi in thin film and in bulk diffusion couplesJournal of Applied Physics, 1982
- Transmission electron microscopy of the formation of nickel silicidesPhilosophical Magazine A, 1982
- Reversible phase transformation in the Pd2Si-PdSi thin-film systemApplied Physics Letters, 1980
- Nucleation-controlled thin-film interactions: Some silicidesApplied Physics Letters, 1979
- Silicide formation with bilayers of Pd-Pt, Pd-Ni, and Pt-NiJournal of Applied Physics, 1979
- Dynamics of laser-induced formation of palladium silicideApplied Physics Letters, 1979
- The growth and transformation of Pd2Si on (111), (110) and (100) SiThin Solid Films, 1973
- Thermal stability of thin PtSi films on silicon substratesJournal of Applied Physics, 1972
- Phase ChangesPublished by Elsevier ,1956