Increase in photosensitivity in silica-based optical waveguides on silicon

1 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (7) , 621-623
https://doi.org/10.1049/el:19930416

Abstract

An increase in the photoinduced refractive-index change Δn in silica-based optical waveguides on silicon is described. The increase is attained by the consolidation of a core film in a reducing atmosphere. A maximum Δn of 3.9 × 10⁻⁴ is obtained for the TE mode by UV laser irradiation at 248nm. This is four times larger than that in conventional waveguides.

Keywords

248 NM
TE MODE
PHOTOSENSITIVITY
SI SUBSTRATE
PLANAR WAVEGUIDES
FILM CONSOLIDATED IN REDUCING ATMOSPHERE
SIO2:GEO2-SI
PHOTOINDUCED REFRACTIVE-INDEX CHANGE
UV LASER IRRADIATION

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