Impact Ionization and Quantum Efficiency in Silicon
- 1 July 1963
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 82 (1) , 58-64
- https://doi.org/10.1088/0370-1328/82/1/308
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Reflectance and Photoemission From SiPhysical Review Letters, 1962
- Hot-electron emission from semiconductorsSolid-State Electronics, 1962
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962
- Energy Dependence of Indirect Optical Absorption in SemiconductorsPhysical Review B, 1962
- A note on the theory of the quantum efficiency of germanium and siliconCzechoslovak Journal of Physics, 1958
- Electron Emission from Avalanche Breakdown in SiliconPhysical Review B, 1957
- On the theory of the spectral dependence of the quantum efficiency of homopolar crystalsCzechoslovak Journal of Physics, 1957
- The quantum efficiency of the photo-electric effect in germanium for the 0.3–2 μ wavelength regionCzechoslovak Journal of Physics, 1957
- Dielectric Breakdown in SolidsProceedings of the Physical Society. Section B, 1956
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955