CdxHg1−xTe n-type layers grown by molecular beam epitaxy
- 1 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3) , 264-266
- https://doi.org/10.1063/1.93495
Abstract
CdxHg1−xTe n‐type layers have been grown by molecular beam epitaxy (MBE) on CdTe (111) orientation substrates at growth temperatures between 120 and 180 °C. It is shown, as predicted previously for films grown at 110 °C, that an improvement in structural quality by a substrate temperature raise and growth in a Hg flux is followed by an improvement of electrical properties. For substrate temperature Ts = 180 °C films have low carrier concentration and high electron Hall mobilities close to the best value reported for layers grown by other techniques. These results indicate that MBE is now a promising technique for CdxHg1−xTe device applications.Keywords
This publication has 3 references indexed in Scilit:
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- Molecular beam epitaxy of II–VI compounds: CdxHg1−xTeJournal of Crystal Growth, 1981
- The Hall effect in polycrystalline and powdered semiconductorsReports on Progress in Physics, 1980