Effect of strain on GaN exciton spectra
- 1 July 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (7) , 1026-1029
- https://doi.org/10.1088/0268-1242/11/7/009
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Residual strain in GaN epilayers grown on sapphire and (6H)SiC substratesApplied Physics Letters, 1996
- Free and bound excitons in thin wurtzite GaN layers on sapphireSemiconductor Science and Technology, 1996
- Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substratesSolid State Communications, 1996
- Exciton lifetimes in GaN and GaInNApplied Physics Letters, 1995
- Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Fine structure in the optical absorption edge of anisotropic crystalsJournal of Physics and Chemistry of Solids, 1960