Light-induced effects in GaAs f.e.t.s

5 July 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (14) , 439-441
https://doi.org/10.1049/el:19790315

Abstract

It is shown theoretically and experimentally that the variations of the d.c. and dynamic properties in a GaAs f.e.t. when a light beam strikes the transistor's gate can be accounted for by an appropriate change in the gate-junction equivalent built-in voltage. A simple relationship connects this change with the variations of the light intensity.

Keywords

LIGHT INTENSITY
TRANSCONDUCTANCE
FET
GAAS
LIGHT INDUCED EFFECTS
FERMI LEVEL SPLIT
DC VARIATION
III-V SEMICONDUCTORS
SCHOTTKY JUNCTION GATE
VOLTAGE CHANGE
PINCH OFF VOLTAGE
DYNAMIC PROPERTIES
TRANSISTOR CHARACTERISTICS

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