InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current
- 7 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (1) , 2-3
- https://doi.org/10.1049/el:19820002
Abstract
Using a new LPE growth technique, an InGaAsP/InP planar buried heterostructure laser diode (PBH-LD) has been realised in 1.3 and 1.5 μm wavelength regions. As a result of the effective carrier confinement, CW threshold currents as low as 8.5 mA and 13 mA have been obtained in 1.3 and 1.5 μm PHB-LDs, respectively, at room temperature.Keywords
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