Bulk-barrier transistor

1 October 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (10) , 1380-1386
https://doi.org/10.1109/t-ed.1983.21303

Abstract

Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.

Keywords

BIPOLAR TRANSISTORS
TELLURIUM
ELECTRONS
BIPOLAR TRANSISTOR
CHARGE CARRIERS
SPACE CHARGE REGION
SPACE CHARGE

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