Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor
- 12 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2) , 98-100
- https://doi.org/10.1063/1.97831
Abstract
We have measured the electroluminescence spectrum of a double heterojunction bipolar transistor and found that a potential well formed at the base-collector junction acts as a preferential trap of low-energy electrons in the base. At high injection current densities the trap saturates. The subsequent buildup of carriers in the base changes the transistor turn-on characteristics.Keywords
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