A 4-GHz large-area (160000 ?m/sup 2/) MSM-PD on ITG-GaAs
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (1) , 71-73
- https://doi.org/10.1109/68.817497
Abstract
We report the first large-area (400 /spl mu/m/spl times/400 /spl mu/m) metal-semiconductor-metal photodetector (MSM-PD) with a FWHM of 86 ps (4-GHz bandwidth), and nanoamp dark currents at 10 V. This is achieved by using intermediate-temperature grown GaAs (ITG-GaAs) to tailor the carrier lifetime in the material, so that the lifetime/spl ap/transit time between the electrodes. This removes the slow tail response typical of the impulse response of MSM-PDs, without significantly reducing the responsivity. A comparison to normal-temperature GaAs is made demonstrating a dramatic improvement for large-area photodetectors. Thus, we have shown that ITG-GaAs is an excellent material for large-area detectors.Keywords
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