Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
- 1 October 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (10A) , L1708-1711
- https://doi.org/10.1143/jjap.30.l1708
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989