Carbon nanotube memory devices of high charge storage stability
Top Cited Papers
- 21 October 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (17) , 3260-3262
- https://doi.org/10.1063/1.1516633
Abstract
Molecular memory devices with semiconducting single-walled carbon nanotubes constituting a channel of 150 nm in length are described. Data storage is achieved by sweeping gate voltages in the range of 3 V, associated with a storage stability of more than 12 days at room temperature. By annealing in air or controlled oxygen plasma exposure, efficient switching devices could be obtained from thin nanotube bundles that originally showed only a small gate dependence of conductanceKeywords
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