A time- and temperature-dependent 2-D simulation of the GTO thyristor turn-off process

1 September 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (9) , 1156-1163
https://doi.org/10.1109/T-ED.1984.21681

Abstract

GTO thyristor turn-off process is analyzed for a resistive load case by performing an exact two-dimensional time- and temperature-dependent numerical simulation. A newly defined concept "on-region" is introduced to help understanding of the simulation results. Excess carrier plasma (on-region) in the p-base is squeezed finally to as narrow as 60 µm wide, accompanying a large current density increase at the center of the middle junction. The carriers in the n-base are found not to be greatly affected by the initial plasma squeezing in the p-base. After the on-region width in the p-base reaches its final limit, the excess carriers around the middle junction of the final on-region is rapidly reduced, resulting in complete anode current turn-off.

Keywords

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