Optically triggered GaAs thyristor switches: integrated structures for environmental hardening

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Abstract
Opticallytriggered thyristor switches often operate in adverse environments such as high temperature and high dose-rate transient radiation which can result in lowered operating voltage and premature triggering. These effects can be reduced by connecting or monolithically integrating a reverse-biased compensating photodiode or phototransistor into the gate of the optically-triggered thyristor. We have demonstrated the effectiveness of this hardening concept in silicon thyristors packaged with photodiodes and in gallium arsenide optically-triggered thyristors monolithically integrated with compensating phototransistors.

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