High speed, high efficiency resonant-cavity enhancedInGaAs MSM photodetectors
- 20 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (13) , 1231-1232
- https://doi.org/10.1049/el:19960810
Abstract
Resonant-cavity-enhanced In/InGaAs metal-semiconductor-metal photodetectors designed for 1.31 µm wavelength and rear illumination are demonstrated. The bottom mirror of the microcavity consists of an InGaAlAs/InAlAs buried Bragg reflector, and the top mirror comprises the interdigitated contact metallisation and a Si/SiNx quarter wave stack deposited on the surface. An external quantum efficiency of 77%, and a 3 dB bandwidth of 10 GHz, are achieved with an InGaAs absorber thickness of 300 nm.Keywords
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