Reflection gain up to 6 dB at 65 GHz in GaInAs/AlInAssuperlattice oscillators
- 1 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (16) , 1506-1507
- https://doi.org/10.1049/el:19960962
Abstract
GaInAs/AlInAs superlattice oscillators with optical access have been fabricated and tested in the V band. The devices exhibit the NDC mechanism at frequencies higher than 65 GHz, with low parasitic damping and a gain value of 6 dB at 65 GHz. The measured S parameters are in fair agreement with a simple numerical simulation.Keywords
This publication has 2 references indexed in Scilit:
- Frequency limitations of negative differential mobility in vertical conduction in superlatticesApplied Physics Letters, 1994
- Direct optical injection locking of 20 GHz superlatticeoscillatorsElectronics Letters, 1994