Residual sulphur and silicon doping in InP and GaInAs
- 24 July 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (1) , 128-134
- https://doi.org/10.1016/0022-0248(86)90018-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxyApplied Physics Letters, 1985
- Analysis of carbon and oxygen in GaAs using a secondary ion mass spectrometer equipped with a 20 K-cryopanel pumping systemJournal of Vacuum Science & Technology A, 1985
- Donor identification in liquid phase epitaxial indium phosphideApplied Physics Letters, 1984
- Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardmentVacuum, 1984
- Use of implanted samples as standards in spark-source mass spectrometry with application to the analysis of III—V semiconductorsAnalytica Chimica Acta, 1982
- Growth of InP by infinite solution LPEJournal of Crystal Growth, 1981
- Impurities in single crystal indium phosphideJournal of Materials Science, 1980
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980