Switching times in amorphous boron, boron plus carbon, and silicon thin films

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Abstract
Switching time studies in amorphous boron, boron plus carbon, and silicon thin films have been conducted under pulse and steady−state testing conditions at both 300 and 77 K. Measurements show that the transition times are related to the RC time constant of the system and that the transition is always accompanied by filament formation. At low frequencies, two separate switching time constants are observed during the transition. The recovery time is proportional to the power dissipated in the filament. The delay time is inversely proportional to sample thickness and exhibits statistical fluctuations. The time measurements, coupled with sample physical and electrical parameters and filament locations, suggest a model of switching combining both thermal and electronic elements.