Evaluation of structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method by Rutherford backscattering spectroscopy
- 15 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (4) , 1790-1792
- https://doi.org/10.1063/1.343419
Abstract
The structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method, in which silicon vapor from molten silicon is transported to a growth cavity made of graphite, has been evaluated by Rutherford backscattering spectroscopy (RBS) experiments in the [0001] channeling conditions using a beam of 4He+ of 1.5 MeV. The axial half-angle ψ1/2 and the minimum yield χmin in the [0001] channeling were measured to be 0.64±0.07° and 0.040±0.001, respectively. By comparing these experimental values with corresponding theoretical values (ψ1/2=0.61°, χmin=0.016), it is found that the 6H-SiC single crystal has a high structural quality with only a small amount of imperfections comparable to the detection limit of RBS (about 0.1%).This publication has 5 references indexed in Scilit:
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