Stress and temperature dependence of the electronic properties of n-type silicon inversion layers

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Abstract
The ground state for n-type silicon inversion electrons at the Si (100)/SiO2 interface is studied theoretically as a function of temperature, applied uniaxial stress and gate voltage. Calculations on a model that includes charge-density-wave states under favourable conditions provide results which allow a consistent and unified description of a whole series of experimental data that otherwise lead to divergent interpretations. One novel aspect of the theory is the ability of temperature and/or stress to induce and destroy a broken-symmetry ground state with a first- and a second-order phase transition. Parameters in the theory can, in principle, be used to estimate the effectiveness of screening in the inversion layer and the strength of electron-lattice coupling at the interface.