Dual gate with replicate and pseudo-swap functions using double conductor layers for ion-implanted devices
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 23 (5) , 2569-2571
- https://doi.org/10.1109/tmag.1987.1065370
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Two conductor levels block replication for 4 µm period ion implanted devicesIEEE Transactions on Magnetics, 1984