Substrates for high-Tcsuperconductor microwave integrated circuits
- 1 September 1994
- journal article
- Published by IOP Publishing in Superconductor Science and Technology
- Vol. 7 (9) , 609-622
- https://doi.org/10.1088/0953-2048/7/9/001
Abstract
This review paper presents a discussion on dielectric substrate materials suitable for the preparation of YBa2Cu3O7-x thin-film based microwave integrated circuits. The requirements on the properties of the substrate materials are specified. They cover the properties crucial both for the preparation of high-quality YBa2Cu3O7-x films and for the design of microwave elements. The former includes mainly the lattice match, the match of thermal expansivities, chemical stability, and absence of twinning. The latter includes the relative dielectric permittivity ( epsilon ) and the related tolerances, the microwave loss tangent, and the substrate area required for the accommodation of a microwave circuit. The properties of the currently available substrates suitable for YBCO film epitaxy are discussed in view of these requirements. The main attention is paid to the microwave properties. Current achievements and potential difficulties of the crystal growth technology in the preparation of the substrates are taken into account as well.Keywords
This publication has 65 references indexed in Scilit:
- Thin-film multilayer interconnect technology for YBa2Cu3O7−xJournal of Applied Physics, 1994
- Epitaxial YBa2Cu3O7 growth on KTaO3 (001) single crystalsApplied Physics Letters, 1993
- Microwave active and nonlinear components based on high temperature superconductorsJournal de Physique III, 1993
- High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineeringJournal of Superconductivity, 1993
- Designing with superconductorsIEEE Spectrum, 1993
- Multichip module using multilayer YBa2Cu3O7−δ interconnectsApplied Physics Letters, 1993
- Relative permittivity and dielectric loss tangent of substrate materials for high-T c superconducting filmJournal of Superconductivity, 1991
- Experimental technology and performance of 0.1-µm-gate-length FETs operated at liquid-nitrogen temperatureIBM Journal of Research and Development, 1990
- Oxygen ordering and the orthorhombic-to-tetragonal phase transition inPhysical Review B, 1987
- Experimental observation of fundamental microwave absorption in high-quality dielectric crystalsPhysics Letters A, 1987