CW operation of 1.5 μm GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet

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Abstract
The reactive-ion-etching technique in forming facet mirrors for 1.5 μm GaInAs/InP buried-heterostructure (BH) lasers is reported. Room-temperature CW operation has been achieved with BH lasers having one of the facets formed by RIE and metallic coating and the other by cleaving. The laser with 330 μm long cavity has a 110 mA threshold.