Recoil implantation of antimony in silicon
- 30 April 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 93-96
- https://doi.org/10.1016/0029-554x(81)90675-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Migration of Mo atoms across Mo–Si interface induced by Ar+ ion bombardmentApplied Physics Letters, 1974
- Study of the growth and structure of antimony films on carbon substrates in low and high vacuumJournal of Physics D: Applied Physics, 1974
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- The theory of recoil implantationRadiation Effects, 1969