Fast organic thin-film transistor circuits
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (6) , 289-291
- https://doi.org/10.1109/55.767101
Abstract
We have fabricated organic thin-film transistors and integrated circuits using pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam sputtered silicon dioxide as the gate dielectric and a double-layer photoresist process to isolate devices. These transistors have carrier mobility near 0.5 cm/sup 2//V-s and on/off current ratio larger than 10/sup 7/. Using a level-shifting design that allows circuits to operate over a wide range of threshold voltages, we have fabricated ring oscillators with propagation delay below 75 /spl mu/s per stage, limited by the level-shifting circuitry. When driven directly, inverters without level shifting show submicrosecond rise and fall time constants.Keywords
This publication has 11 references indexed in Scilit:
- Integrated a-Si:H/pentacene inorganic/organic complementary circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Pentacene thin film transistors and inverter circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Stacked pentacene layer organic thin-film transistors with improved characteristicsIEEE Electron Device Letters, 1997
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997
- Pentacene organic thin-film transistors-molecular ordering and mobilityIEEE Electron Device Letters, 1997
- Complementary circuits with organic transistorsApplied Physics Letters, 1996
- Logic Gates Made from Polymer Transistors and Their Use in Ring OscillatorsScience, 1995
- All-Polymer Field-Effect Transistor Realized by Printing TechniquesScience, 1994
- Field-effect mobility of poly(3-hexylthiophene)Applied Physics Letters, 1988
- Practicing the Novolac deep-UV portable conformable masking techniqueJournal of Vacuum Science and Technology, 1981