A Thin GaAs N on N+ Epitaxial Film with Abrupt Interface in Carrier Concentration Profile
- 1 January 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (1)
- https://doi.org/10.1143/jjap.9.156
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown FilmsJapanese Journal of Applied Physics, 1968
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate InterfaceJapanese Journal of Applied Physics, 1968