Vectorized Monte Carlo calculation for the transport of ions in amorphous targets

Abstract
This paper describes the vectorized implantation of a Monte Carlo technique to simulate the transport of energetic ions in amorphous targets. Utilizing the vector processing capabilities of a CRAY-1 computer, we have achieved speed-up factors between three to ten over equivalent scalar implementations. The method has been successfully applied to simulate typical ion-implant conditions in modern silicon device processing.

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