Photo production of surface recombination centers in gallium arsenide
- 1 March 1987
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 42 (3) , 233-237
- https://doi.org/10.1007/bf00620606
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Correlations of photoluminescence with defect densities in semi-insulating gallium arsenideIEEE Transactions on Electron Devices, 1985
- Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAsApplied Physics Letters, 1983
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Ultrafast magnetophotoconductivity of semi-insulating gallium arsenideApplied Physics Letters, 1981