The quest for ballistic action: Avoiding collisions during electron transport to increase switching speeds is the goal of the ultimate transistor
- 1 February 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 23 (2) , 36-38
- https://doi.org/10.1109/mspec.1986.6370997
Abstract
After describing how ballistic electrons can be created, the author outlines a working gallium arsenide ballistic transistor. The work that has been done in creating a silicon ballistic transistor is then surveyed.Keywords
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