MSI/LSI radiation response, characterization and testing

1 December 1974

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 21 (6) , 308-314
https://doi.org/10.1109/TNS.1974.6498946

Abstract

Results are presented on the permanent damage and transient photoresponse of complex monolithic MSI/LSI arrays representing a variety of both bipolar and MOS technologies. Unique aspects of MSI/LSI vulnerability are principally in the nature of the basic logic cells and the complexities of overall array performance evaluation. Considerations illustrated in permanent damage evaluation are complete performance evaluation, electrical bias conditions during radiation exposure, selection of sample sizes, and electrical pulse overstress effects. Considerations illustrated in the transient photoresponse are the dependence on ionizing radiation pulse-width, determination of worst-case logic operating conditions, and power-supply photocurrent. Analytical techniques are suggested as an essential aid in MSI/LSI characterization and testing.

Keywords

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