Thin base formation by double diffused polysilicon technology
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxially grown base transistor for high-speed operationIEEE Electron Device Letters, 1987
- High-speed polysilicon emitter—base bipolar transistorIEEE Electron Device Letters, 1986
- Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistorsIEEE Transactions on Electron Devices, 1986
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- The SIS tunnel emitter: A theory for emitters with thin interface layersIEEE Transactions on Electron Devices, 1979