Laser annealing of self-ion damaged silicon
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9) , 701-703
- https://doi.org/10.1063/1.91260
Abstract
Partially damaged self‐ion implanted Si(100) has been irradiated by a ruby laser pulse (λ=0.69 μm, tp=15 ns). Channeling effect technique measurements and TEM micrographs show the reordering of the implanted layer in the laser energy range 1.5–2.5 J/cm2. No polycrystalline transition has been detected. Calculations in terms of local melting of the disordered zone explain the experimental data.Keywords
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