Heteroepitaxial Growth of Tungsten Carbide Films on W(110) by Plasma-Enhanced Chemical Vapor Deposition
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7R) , 3628
- https://doi.org/10.1143/jjap.34.3628
Abstract
Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (0001)WC|| (110)W in the alignment [1\bar210]WC|| [\bar111]W.Keywords
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