Model dielectric functions for native oxides on compound semiconductors
- 1 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (18) , 2523-2524
- https://doi.org/10.1063/1.110469
Abstract
Analytical models with eight parameters have been found which describe the dielectric functions of native or electrochemically grown oxide layers on the compound semiconductors GaP, GaAs, GaSb, InP, InAs, and InSb in the 1.6 to 5.6 eV photon energy range. These model functions agree with the experimental optical constants to within the accuracy of the measurements. They will be useful for the design and analysis of semiconductor laser structures, solar cells, and other electro‐optical devices.Keywords
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