Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plasma Oscillations in High-Electron-Mobility Transistors

Publisher Website
Google Scholar
Abstract
We analyze dynamic behavior of the electron system in high-electron mobility transistors (HEMTs) associated with tunneling injection from the two-dimensional channel into the gate under forward bias. We show that the propagation of the injected electrons across the gate layer can result in the self-excitation of plasma oscillations in the HEMT when the transit-time and plasma resonances are close. The resonant frequencies in HEMTs with reasonable parameters correspond to the terahertz range. The criterion of the plasma instability is expressed via the structural parameters. The self-excitation of the plasma oscillations can be used to generate terahertz radiation.