Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures
- 31 December 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (27) , 2579-2582
- https://doi.org/10.1103/physrevlett.53.2579
Abstract
Two classes of artificial semiconductor heterostructures, differing only in the inversion symmetry of their internal quantum wells, are studied via magnetotransport. The samples consist of GaAs/(AlGa) As layered structures containing two-dimensional hole systems. The results reveal a lifting of the spin degeneracy of the lowest hole subband in the samples with inversion asymmetric quantum wells. In those structures with symmetric wells the subband remains doubly degenerate.Keywords
This publication has 3 references indexed in Scilit:
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Resolution of Shubnikov-de Haas Paradoxes in Si Inversion LayersPhysical Review Letters, 1980
- Inversion Asymmetry Effects on Oscillatory Magnetoresistance in HgSePhysical Review Letters, 1967