Atomic chlorine concentration measurements in a plasma etching reactor. I. A comparison of infrared absorption and optical emission actinometry
- 1 August 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3) , 792-798
- https://doi.org/10.1063/1.339734
Abstract
Atomic chlorine concentrations in Cl2 and CF3Cl plasmas have been measured using both infrared absorption spectroscopy and optical emission actinometry. These measurements were made over a range of plasma conditions including plasma excitation frequencies of 72 kHz–13.5 MHz, power inputs of 10–100 W, and pressures of 200–800 mTorr. In Cl2 plasmas, the technique of optical emission actinometry misrepresents atomic chlorine concentration changes by nearly an order of magnitude. The errors in the actinometry technique are believed to result from excited state Cl production by electron impact dissociation of Cl2. A simple model for Cl emission is in good agreement with the experimental observations. In CF3Cl discharges, the technique of optical emission actinometry is shown to accurately represent variations in atomic chlorine concentration with changing process conditions.This publication has 27 references indexed in Scilit:
- Atomic chlorine concentration and gas temperature measurements in a plasma etching reactorJournal of Applied Physics, 1987
- On the use of actinometric emission spectroscopy in SF6-O2 radiofrequency discharges: Theoretical and experimental analysisPlasma Chemistry and Plasma Processing, 1985
- Optical diagnostics of low pressure plasmasPublished by Walter de Gruyter GmbH ,1985
- Optical emission spectroscopy and actinometry in CCl4-Cl2 radiofrequency dischargesPlasma Chemistry and Plasma Processing, 1984
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983
- Summary Abstract: Laser‐induced fluorescence diagnostics of glow discharges: Spatially resolved concentration profilesJournal of Vacuum Science & Technology A, 1983
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Reactive ion etching of siliconJournal of Vacuum Science and Technology, 1979