Formation of amorphous interlayers by a solid-state diffusion in Zr and Hf thin films on silicon
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5) , 457-459
- https://doi.org/10.1063/1.102764
Abstract
The formation of amorphous interlayers (a interlayers) in polycrystalline Zr and Hf thin films on single-crystal (111)Si has been observed by cross-sectional transmission electron microscopy. The growth of a interlayers in group IVa metal thin films on silicon was found to exhibit similar behavior but was fundamentally different from those of metal-metal diffusion couples. The growth of a interlayers was found to follow a linear growth law initially then slowed down until a critical thickness was reached. Si was found to be the dominant diffusing species. Good correlation was found among the maximum thickness of the a interlayer, the difference in atomic size between metal and Si, the activation energy of the linear growth, and the largest heats of formation of the respective silicides.Keywords
This publication has 13 references indexed in Scilit:
- Submicron void formation in amorphous NiZr alloysPhysical Review Letters, 1988
- Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealingJournal of Applied Physics, 1988
- Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealingJournal of Applied Physics, 1988
- Disordered intermixing at the platinum:silicon interface demonstrated by high-resolution cross-sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channelingJournal of Applied Physics, 1988
- Micromechanism for Metallic-Glass Formation by Solid-State ReactionsPhysical Review Letters, 1985
- Epitaxial Growth of Transition Metal Silicides on SiliconMRS Proceedings, 1985
- Formation of an Amorphous Alloy by Solid-State Reaction of the Pure Polycrystalline MetalsPhysical Review Letters, 1983
- Sheet resistivity and transmission electron microscope investigations of BF+2 -implanted siliconJournal of Applied Physics, 1981
- Transmission electron microscopy of cross sections of large scale integrated circuitsIEEE Transactions on Electron Devices, 1976
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976