High power GaAlAs/GaAs HBTs for microwave applications

• 1 January 1987
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1987.191503

Abstract

Keywords

• HETEROJUNCTION BIPOLAR TRANSISTOR
• SILICON
• BREAKDOWN VOLTAGE
• POWER TRANSISTORS
• GALLIUM ARSENIDE
• DOPING
• POWER ADDED EFFICIENCY
• GAIN