Fine Pattern Formation of Gallium Arsenide by In Situ Electron-Beam Lithography Using an Ultrathin Surface Oxide as a Resist

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Abstract
Formation of fine patterns such as lines and spots on a GaAs surface by in situ electron beam (EB) lithography is demonstrated. An ultrathin surface oxide (<1 nm) of GaAs is used as a resist film, which can be patterned by EB-assisted etching. The minimum pattern size of less than 1.0 µm is obtained; it is limited by the electron beam shape in the present experiment. The EB-induced patterning of the oxide resist is not due to substrate heating or minority carrier generation, but to excitation of the sample surface and/or the chlorine atoms adsorbed on the oxide resist film.