Indium-phosphide c.w. transferred-electron amplifiers

25 July 1974

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 10 (15) , 307-308
https://doi.org/10.1049/el:19740243

Abstract

J band c.w. low-noise indium-phosphide reflection amplifiers are described. An integral-heatsink technology has resulted in devices that can be operated c.w. at high bias levels. C.W. noise figures as low as 10.7 dB have been obtained at 14 GHz, and voltage-gain-bandwidth products of 3.1 GHz have been obtained. Measurements of impedance, noise and the temperature sensitivity of the gain are presented.

Keywords

INP
14 GHZ
MICROWAVE AMPLIFIERS
TEMPERATURE SENSITIVITY
GAIN
IMPEDANCE
TRANSFERRED ELECTRON DEVICES
INTEGRAL HEATSINK TECHNOLOGY
SOLID STATE MICROWAVE DEVICES
NOISE
J-BAND

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