A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer
- 1 October 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (10) , 548-549
- https://doi.org/10.1109/55.17840
Abstract
The CaF/sub 2/ layer and an undoped GaAs channel layer grown by molecular beam epitaxy (MBE) on a semi-insulating GaAsKeywords
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