Aging phenomena of plasma oxidized Pb-alloy Josephson junctions
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4508-4512
- https://doi.org/10.1063/1.328391
Abstract
Aging phenomena in I‐V characteristics of plasma oxidized Pb‐alloy Josephson junctions have been investigated. Aging effect, or decrease in tunneling resistance during room‐temperature storage as long as 300 days, was found to be dominated by a single rate‐controlling process of activation energy of 0.78 eV. Based on Auger analysis of tunneling layers, it was concluded that the aging effect can be attributed to the compositional variation in the tunneling oxide layer resulting from the conversion from a Pb‐ and In‐oxide mixture into In oxide. A simple phenomenological model is proposed, which well explains the decrease in tunneling resistance upon aging.This publication has 9 references indexed in Scilit:
- Ellipsometric study on rf-plasma oxidized tunnel barriers for In/Pb/Au-alloy Josephson junctionsJournal of Applied Physics, 1980
- Experimental Integration Technology for Josephson Tunneling Switching DevicesJapanese Journal of Applied Physics, 1979
- Photolithographic fabrication of lead alloy Josephson junctionsJournal of Vacuum Science and Technology, 1978
- The diffusion of indium in lead films containing goldThin Solid Films, 1977
- An investigation of the thermal cycling of Pb-alloy Josephson tunneling gatesJournal of Applied Physics, 1977
- Room temperature oxidation of lead-indium alloy filmsJournal of Electronic Materials, 1975
- Auger analysis of thin oxide films on Pb–In alloysThe Journal of Chemical Physics, 1975
- Fabrication of experimental Josephson tunneling circuitsJournal of Vacuum Science and Technology, 1974
- Vortex Structure and Critical Currents in Josephson JunctionsPhysical Review B, 1967