Multilayer ferroelectric-semiconductor structures for controlled sensors with memory

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Abstract
The results of the experiments on the ferroelectric field effect in thin film semiconductors deposited on different ferroelectrics due to the application of the repolarizing electric field, light and temperature are described. Electric field and light controlled resistors and capacitors with memory with satisfactory parameters in a wide temperature range have been obtained by the deposition of thin semiconductor films of Te, PbSe, SnO2-X, VO2-X, CdS, a-Si:H on ferroelectric single crystals, ceramics and films. The interpretation of the observed effects is based on a model of the existence of nonuniform potential relief at the ferroelectric-semiconductor interface and of potential barriers at the grain boundaries of a semiconductor and their dependence on the value and sign of the ferroelectric polarizing charge. It is concluded that the ferroelectric-semiconductor structure can be used as the basis for creation of controlled resistors and photoresistors, capacitors and photocapacitors with memory and storage of information without power source, meters of light pulses and also temperature-sensitive resistors with controlled properties.

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