Nonlinear optical properties of the electron-hole plasma in Al0.52Ga0.48As

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Abstract
A dense electron‐hole plasma is created in Al0.52Ga0.48As using picosecond excitation with high excess energy. Its properties are studied by time‐resolved photoluminescence and transient transmission spectroscopy. Simultaneous emission out of the indirect X and the direct Γ band is observed. Alloy disorder strongly influences the bimolecular recombination by allowing for quasidirect transitions and stimulated emission out of the indirect X band. The electron‐hole plasma, whose electrons reside mainly in the X valleys, causes strong optical nonlinearities at the direct absorption edge. A persistent absorption bleaching and large induced refractive‐index changes due to band filling of the valence band and induced absorption due to band‐gap renormalization are observed.