Tunneling current microscopy
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8) , 717-719
- https://doi.org/10.1063/1.94037
Abstract
The field dependence of electron beam induced current in thin oxide (22.5 nm) capacitors has been studied with a view of using the induced current for detecting defects in such devices. Results indicate that the induced current follows Fowler–Nordheim tunneling behavior when the field exceeding 4 MV/cm, and that a certain type of defect in thin oxide capacitors can be imaged with high contrast and low noise. A high current gain (∼103) of the induced current was also obtained. These findings open the possibility of acquiring information on the quality and reliability of composite metal-insulator-metal/semiconductor structures, and of achieving a high current for signal amplification.Keywords
This publication has 4 references indexed in Scilit:
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- Electron beam imaging of the semiconductor-insulator interfaceC R C Critical Reviews in Solid State Sciences, 1975
- REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM SILICONApplied Physics Letters, 1970
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969