Avalanche Breakdown in n-p Germanium Diffused Junctions
- 1 April 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (4) , 596-597
- https://doi.org/10.1063/1.1702414
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Avalanche Breakdown Voltage in Silicon Diffused p-n Junctions as a Function of Impurity GradientJournal of Applied Physics, 1956
- The Dependence of Transistor Parameters on the Distribution of Base Layer ResistivityProceedings of the IRE, 1956
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954