Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy

13 May 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (20) , 2879-2881
https://doi.org/10.1063/1.116355

Abstract

X‐ray photoemission spectroscopy has been used to measure the valence band offset ΔE_v for the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6H–SiC (0001) substrates. A nested interface band alignment with ΔE_v=1.36±0.07 eV is obtained (ΔE_c/ΔE_v=52/48).

Keywords

ALUMINIUM NITRIDES
GALLIUM NITRIDES
HETEROSTRUCTURES
HETEROJUNCTIONS
INTERFACE STATES
BAND STRUCTURE
PHOTOEMISSION
MOLECULAR BEAM EPITAXY
ALIGNMENT

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