Nonresonant excitonic optical nonlinearity in semiconductors
- 15 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (6) , 3862-3866
- https://doi.org/10.1103/physrevb.40.3862
Abstract
The nonresonant excitonic optical nonlinearity is analyzed theoretically, based on the boson formalism for the many-exciton theory. The theory presented in this paper treats both the mutual interaction between excitons and the anharmonic interaction of excitons with the radiation field on an equal basis. It is pointed out that the effect of the latter anharmonicity on the third-order optical susceptibility is of crucial importance for materials with small exciton binding energy, such as GaAs and other III-V semiconductors.Keywords
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