Epitaxial growth of lanthanide trifluorides by MBE
- 1 March 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (2) , 722-723
- https://doi.org/10.1116/1.583124
Abstract
The first epitaxial growth of a hexagonal structure lanthanide trifluoride on a semiconductor is reported: LaF3 on Si (111). LEED, RHEED, and x-ray diffraction studies show that the c-axis of LaF3 is normal to the Si(111) plane. A similar epitaxial relation is expected for other members of the lanthanide trifluoride family: CeF3, PrF3, and NdF3 which are isomorphous with LaF3 and have a closer (basal plane) lattice parameter match to Si(111). The hard, water insoluble nature of these materials makes them more practicable than group II fluorides as exploratory films for semiconductor passivation, gate insulator, and epitaxial interlayers.Keywords
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